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| Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 q q 16.70.3 14.00.5 q High collector to emitter voltage VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -200 -200 -150 -180 -6 -3 -2 30 2 150 -55 to +150 Unit V 2SB940 2SB940A 2SB940 Collector to base voltage Collector to emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C Solder Dip 4.0 7.50.2 s Features 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = -200V, IE = 0 VEB = -4V, IC = 0 IC = -50A, IE = 0 IC = -5mA, IB = 0 IE = -500A, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -400mA VCE = -10V, IC = -400mA IC = -500mA, IB = -50mA VCE = -10V, IC = - 0.5A, f = 10MHz min typ max -50 -50 Unit A A V V V -200 -150 -180 -6 60 50 -1 -1 30 240 Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency *h FE1 V V MHz Rank classification Q 60 to 140 P 100 to 240 Rank hFE1 1 Power Transistors PC -- Ta 50 -600 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C -500 IB=-4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -1.0mA - 0.5mA 0 0 20 40 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 0 2SB940, 2SB940A IC -- VCE -2.0 VCE=-10V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) Collector current IC (A) 40 -1.6 25C -1.2 TC=100C -400 30 -300 (1) 20 - 0.8 -25C -200 10 (3) (4) 0 (2) -100 - 0.4 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10000 -10 IC/IB=10 hFE -- IC 10000 VCE=-10V 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Forward current transfer ratio hFE -3 1000 300 100 -25C 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C 25C -1 TC=100C 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 Transition frequency fT (MHz) -1 -3 -10 3000 - 0.1 - 0.3 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 -3 -1 ICP t=0.5ms IC 5ms 1ms 10 (2) - 0.3 DC - 0.1 - 0.03 - 0.01 -1 1 2SB940A 10-1 2SB940 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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